Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM
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DOI: 10.3390/mi13091476
Abstract: As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better… read more here.
Keywords: structural variations; bcat; buried channel; channel array ... See more keywords