Highly Sensitive Photodetectors Based on Monolayer MoS2 Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c07117
Abstract: Molybdenum disulfide (MoS2) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. However, most of the reported MoS2 phototransistors have adopted a back-gate field-effect transistor (FET)… read more here.
Keywords: field effect; buried gate; monolayer mos2; highly sensitive ... See more keywords
Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2020.3022083
Abstract: A 650-V and 10-A silicon carbide (SiC) stacked cascode assembly has been proposed and demonstrated, in which a low-voltage Si-MOSFET (LV Si-MOSFET) is stacked on a high-voltage SiC buried gate static induction transistor (HV SiC-BGSIT).… read more here.
Keywords: cascode; induction transistor; gate static; static induction ... See more keywords