Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations
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DOI: 10.1007/s10825-018-1168-y
Abstract: A novel SOI LDMOS with p+ buried islands and p-top layer in the drift region (PBI SOI) is proposed in this letter. At off-state, the high potential is induced from the drain region to the… read more here.
Keywords: soi ldmos; buried islands; novel soi; drift region ... See more keywords