The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
Sign Up to like & getrecommendations! Published in 2018 at "Technical Physics Letters"
DOI: 10.1134/s1063785018110020
Abstract: In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on… read more here.
Keywords: shape; buried oxide; thickness buried; effect ... See more keywords
Perspective of Buried Oxide Thickness Variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET
Sign Up to like & getrecommendations! Published in 2018 at "Advances in Electrical and Electronic Engineering"
DOI: 10.15598/aeee.v16i3.2797
Abstract: Recently, Fully-Depleted Silicon on Insulator (FD-SOI) MOSFETs have been accepted as a favourable technology beyond nanometer nodes, and the technique of Recessed-Source/Drain (Re-S/D) has made it more immune in regards of various performance factors. However,… read more here.
Keywords: soi mosfet; buried oxide; box; tmg ... See more keywords