Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma
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DOI: 10.3390/mi12060599
Abstract: The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000… read more here.
Keywords: burst width; silicon wafer; power; burst ... See more keywords