Low-Loss Integrated Inductor and Transformer Structure and Application in Regulated LLC Converter for 48-V Bus Converter
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DOI: 10.1109/jestpe.2019.2952878
Abstract: In this article, an LLC converter using gallium nitride (GaN) transistors is proposed for a 48-V regulated and isolated bus converter. Compared with pulsewidth modulation (PWM)-based topologies, the soft switching capability of an LLC allows… read more here.
Keywords: converter; llc converter; bus converter; transformer ... See more keywords
Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications
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DOI: 10.3390/en13246583
Abstract: This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part… read more here.
Keywords: intermediate bus; optimized design; power; converter using ... See more keywords