Influence of boron doping amount on properties of ZnO:B films grown by LPCVD technique and its correlation to a-Si:H/μc-Si:H tandem solar cells
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DOI: 10.1007/s10854-020-03221-0
Abstract: Boron-doped ZnO:B (BZO) films with various doping levels have been prepared on large-area substrates by low pressured chemical vapor deposition technique. The influence of doping amount on electrical and optical properties of BZO films has… read more here.
Keywords: doping amount; technique; bzo films; influence ... See more keywords