Sidewall chemistry of nano-contact patterns in C4F8 + CH2F2 + O2 + Ar inductively coupled plasmas
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DOI: 10.1016/j.tsf.2018.11.009
Abstract: Abstract In this study, silicon dioxide contact holes were etched with C4F8 + CH2F2 + O2 + Ar gas plasmas, and the characteristics of the etching residue thereby generated inside the nanopatterns were investigated. The chemical composition of the etching residue… read more here.
Keywords: contact; nano contact; chemistry; c4f8 ch2f2 ... See more keywords