Low-resistance electrical contact between epitaxially grown thermoelectric oxide material (Ca2CoO3)0.62CoO2 and iridium
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DOI: 10.1016/j.tsf.2020.138420
Abstract: Abstract For the integration of the thermoelectric and magneto resistive active material (Ca2CoO3)0.62CoO2 (Ca3Co4O9) into silicon technology it is mandatory to provide, apart from diffusion barriers and epitaxial growth, electrical contacts with minimal electrical resistance… read more here.
Keywords: ca3co4o9; resistance; contact; ca2coo3 62coo2 ... See more keywords