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   Articles with "cap layer" as a keyword



Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN

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recommendations! Published in 2021 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2021.106125

Abstract: Abstract The growth and properties of the GaN cap layers crystallized by metalorganic vapor phase epitaxy were studied concerning the composition of the underlying AlGaN layer, type of induced strains and the desorption of the… read more here.

Keywords: composition underlying; growth; layer; cap layer ... See more keywords

Surface acoustic waves in one‐dimensional piezoelectric‐metallic phononic crystal: Effect of a cap layer

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recommendations! Published in 2018 at "Ultrasonics"

DOI: 10.1016/j.ultras.2018.06.010

Abstract: HighlightsWe give closed form expressions of the dispersion relations of surface modes induced by a piezoelectric‐metallic superlattice with a cap layer.We demonstrate a rule about the existence of surface modes in piezoelectric‐metallic superlattice.We show the… read more here.

Keywords: layer; surface modes; cap layer; piezoelectric metallic ... See more keywords

Cap-layer-dependent oxidation of ultrathin cobalt films and its effect on the magnetic contrast in scanning electron microscopy with polarization analysis

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recommendations! Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5052305

Abstract: We investigate the influence of a non-magnetic cap layer on the magnetic contrast of a Co film by scanning electron microscope with polarization analysis (SEMPA). Ex-situ sputter-deposited [Ir\Co\Pt]2 samples are terminated with wedge-shaped Pt layers… read more here.

Keywords: oxidation; contrast; microscopy; analysis ... See more keywords

Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0237694

Abstract: The gate reliability of p-GaN gate high electron mobility transistors (HEMTs) was investigated in this Letter. Compared with conventional p-GaN gate HEMT, the in situ SiN cap-layer on the p-GaN layer can lift up the… read more here.

Keywords: sin cap; situ sin; cap layer; reliability ... See more keywords

Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits

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recommendations! Published in 2019 at "International Journal of Electronics"

DOI: 10.1080/00207217.2019.1600738

Abstract: ABSTRACT CMOS (Complementary Metal-oxide-semiconductor) based high-speed applications in the sub-14 nm technology node using InGaAs Fin field-effect-transistors (FinFETs) confront with inevitable effect in form of interface traps upon integration of dielectric layer with InGaAs material.… read more here.

Keywords: in0 52al0; 52al0 48as; layer; cap layer ... See more keywords

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

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recommendations! Published in 2024 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/ad4db1

Abstract: The p-GaN-gated E-mode HEMTs (P-HEMTs) are being extensively studied for emerging power electronics. However, the devices still suffer from performance trade-off among threshold voltage (V TH), output drain current (I DS), and breakdown voltage (V… read more here.

Keywords: gan cap; performance; cap layer; stair ... See more keywords

High-reliability normally off AlGaN/GaN HEMTs with a 720 V breakdown voltage via a TCAD-optimized GaN cap layer

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recommendations! Published in 2025 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ae0758

Abstract: This work presents a detailed Technology Computer Aided Design (TCAD) and Transport of Ions in Matter (TRIM)-based simulation study of normally off AlGaN/GaN high-electron-mobility transistors (HEMTs), focusing on the influence of the thickness of the… read more here.

Keywords: gan cap; cap layer; voltage; normally algan ... See more keywords

Controlling TE surface waves by self-defocusing cap layer in graphene-based photonic crystal

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recommendations! Published in 2018 at "Journal of Nanophotonics"

DOI: 10.1117/1.jnp.12.036007

Abstract: Abstract. We have analytically studied the localized TE surface waves (SWs) in a one-dimensional graphene-based photonic crystal that is capped by a self-defocusing nonlinear layer. Our method is based on the first integral of the… read more here.

Keywords: surface; cap layer; surface waves; graphene ... See more keywords

Investigation of the cap layer for improved GeSn multiple quantum well laser performance.

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recommendations! Published in 2023 at "Optics letters"

DOI: 10.1364/ol.484837

Abstract: The study of all-group-IV SiGeSn lasers has opened a new avenue to Si-based light sources. SiGeSn heterostructure and quantum well lasers have been successfully demonstrated in the past few years. It has been reported that,… read more here.

Keywords: multiple quantum; cap layer; cap; quantum well ... See more keywords

Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics

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recommendations! Published in 2025 at "Crystals"

DOI: 10.3390/cryst15010056

Abstract: This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key… read more here.

Keywords: layer; cap layer; contact; barrier height ... See more keywords

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer

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recommendations! Published in 2022 at "Nanomaterials"

DOI: 10.3390/nano12040643

Abstract: We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to… read more here.

Keywords: algan gan; layer; cap; cap layer ... See more keywords