β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
Sign Up to like & getrecommendations! Published in 2017 at "ACS Omega"
DOI: 10.1021/acsomega.7b01289
Abstract: Steep-slope β-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and… read more here.
Keywords: slope; ga2o3 nanomembrane; negative capacitance; nanomembrane negative ... See more keywords
Impacts of HfZrO thickness and anneal temperature on performance of MoS2 negative-capacitance field-effect transistors
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac197a
Abstract: The MoS2 negative-capacitance field-effect transistor (NCFET) with the ultra-thin (3 nm) HfZrO (HZO) as NC layer and 2 nm Al2O3 as dielectric layer is successfully fabricated by optimizing the annealing temperature and the HZO thickness.… read more here.
Keywords: temperature; negative capacitance; effect; mos2 negative ... See more keywords
Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors
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DOI: 10.1088/2053-1591/ac2016
Abstract: In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the… read more here.
Keywords: negative capacitance; effect; conductivity; interfacial conductivity ... See more keywords
Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2023.3267081
Abstract: For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-oxide-semiconductor (CMOS) devices, various emerging… read more here.
Keywords: field effect; effect transistors; capacitance field; negative capacitance ... See more keywords