Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ab6ef8
Abstract: We propose a model for the gate capacitance of GaN-based trench-gate metal-oxide-semiconductor transistors, based on combined measurements, analytical calculations and TCAD simulations. The trench capacitance is found to be equivalent to four different capacitors, used… read more here.
Keywords: gan based; semiconductor; gate; capacitance gan ... See more keywords