Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy
Sign Up to like & getrecommendations! Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0202951
Abstract: Ion implantation doping is the primary method for forming p–n junctions in HgCdTe. However, the doping and activation in HgCdTe are influenced by various complex factors, leading to inconsistencies between the actual carriers and the… read more here.
Keywords: distribution; capacitance microscopy; hgcdte; carrier ... See more keywords
DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy
Sign Up to like & getrecommendations! Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14110934
Abstract: This study developed a DC-free technique that used dark-mode scanning capacitance microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent oxide thicknesses (EOTs). In contrast to the conventional capacitance–voltage (C–V) method, which… read more here.
Keywords: method; capacitance microscopy; dark mode; scanning capacitance ... See more keywords