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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2868479
Abstract: We report on measurements and modeling of ferroelectric (FE) HfZrO/SiO2 FE–dielectric FETs, which indicate that many of the phenomena attributed to negative capacitance (NC) can be explained by a delayed response of FE-domain switching—referred to…
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Keywords:
slope;
modeling transient;
transient negative;
capacitance steep ... See more keywords