Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105070
Abstract: Abstract In this paper electrical analysis GO/TiO2/Si MOS junction was performed. Current–voltage (I–V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality factor (η), barrier height ( φ B ), rectification ratio… read more here.
Keywords: voltage; tio2 mos; capacitance voltage; investigation electrical ... See more keywords
Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4973856
Abstract: This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step… read more here.
Keywords: voltage; thin film; capacitance voltage; ultraviolet light ... See more keywords
Electrical properties of Al2O3/WSe2 interface based on capacitance-voltage characteristics
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ab8de6
Abstract: We report the electrical properties of Al2O3/WSe2 metal-oxide-semiconductor capacitors based on the analysis of the capacitance-voltage characteristics. Unlike previous studies, capacitance-voltage measurement in this work exhibited both high- and low-frequency behaviors. We estimated reasonable hole… read more here.
Keywords: capacitance voltage; wse2 interface; al2o3 wse2;
Automated instrumentation for nonequilibrium capacitance–voltage measurements at a semiconductor–electrolyte interface
Sign Up to like & getrecommendations! Published in 2017 at "Instruments and Experimental Techniques"
DOI: 10.1134/s0020441216060014
Abstract: An apparatus for measuring nonequilibrium capacitance–voltage characteristics in semiconductor structures with electrolytic contacts is described. A pulse CV method was used in which a space-charge region in the deep-depletion mode was created via application of… read more here.
Keywords: voltage; semiconductor; nonequilibrium capacitance; capacitance voltage ... See more keywords
Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique
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DOI: 10.3390/mi13020262
Abstract: An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is derived. Next, by numerically solving the… read more here.
Keywords: high frequency; bonding structure; capacitance voltage; stacked bonding ... See more keywords