Extraction method for parasitic capacitances and inductances of HEMT models
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DOI: 10.1016/j.sse.2016.12.003
Abstract: Abstract A new method to extract parasitic capacitances and inductances for high electron-mobility transistors (HEMTs) is proposed in this paper. Compared with the conventional extraction method, the depletion layer is modeled as a physically significant… read more here.
Keywords: hemt models; extraction method; capacitances inductances; parasitic capacitances ... See more keywords