Improved capacitive memory of Er:TiO2 TF based MOS device
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.04.040
Abstract: Abstract Improved memory performance of Er:TiO2 thin film (TF) device as compared to the undoped TiO2 TF device is discussed. Capacitance–voltage (C-V) and conductance-voltage (G-V) analysis were performed for various high frequencies ranging from 300 KHz… read more here.
Keywords: voltage; improved capacitive; tio2; capacitive memory ... See more keywords
Experimental and theoretical study of capacitive memory of metal-oxide-semiconductor devices based on Er-doped In2O3 nano-column arrays
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0013904
Abstract: The enhanced electronic memory performance of glancing angle deposited erbium-doped indium oxide (In2O3:Er) transparent nano-column (NCol) based metal-oxide-semiconductor (MOS) structured memory devices is reported. The fabricated MOS devices are Au/In2O3/p-Si, Au/0.26 at. % In2O3:Er/p-Si, and Au/0.48 at. % In2O3:Er/p-Si.… read more here.
Keywords: voltage; nano column; capacitive memory; oxide semiconductor ... See more keywords