An Accurate Characterization of Capture Time Constants in GaN HEMTs
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DOI: 10.1109/tmtt.2019.2921338
Abstract: This paper provides theoretical and experimental evidence that, contrary to what is a widely reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) deep-level traps is not infinitesimally shorter than the modulation envelope… read more here.
Keywords: time; time constants; capture time; capture ... See more keywords