Microscopic mechanism of carbon annihilation upon SiC oxidation due to phosphorus treatment: Density functional calculations combined with ion mass spectrometry
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DOI: 10.7567/apex.11.121301
Abstract: We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carbide (SiC). We identify the most stable form of the phosphorus (P)… read more here.
Keywords: annihilation; carbon; oxidation; mechanism carbon ... See more keywords