Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.06.208
Abstract: Abstract The effect of carbon impurities on electrical resistivity of Mg doped GaN grown by metal organic chemical vapor deposition (MOCVD) was investigated. It was noted that when the growth rate increases or the growth… read more here.
Keywords: resistivity; carbon; type gan; residual carbon ... See more keywords
The influence of carbon impurities on the formation of loops in tungsten irradiated with self-ions
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Nuclear Materials"
DOI: 10.1016/j.jnucmat.2019.151808
Abstract: Abstract The microstructure changes taking place in W under irradiation are governed by many factors, amongst which C impurities and their interactions with self-interstitial atoms (SIA). In this work, we specifically study this effect by… read more here.
Keywords: self ions; formation loops; carbon impurities; impurities formation ... See more keywords
Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c01724
Abstract: Aluminum nitride (AlN) is a semiconductor with a wide range of applications from light-emitting diodes to high-frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemi... read more here.
Keywords: aluminum nitride; time resolved; nitride time; reduction carbon ... See more keywords
Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5041501
Abstract: Effects of carbon impurities and oxygen vacancies in Al2O3 film on the characteristics of Al2O3/GaN MOS capacitors were studied using the different atomic layer deposition (ALD) precursor and high-pressure water vapor annealing (HPWVA). Trimethyl aluminum… read more here.
Keywords: vacancies al2o3; carbon; al2o3 film; oxygen vacancies ... See more keywords
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-020-3263-9
Abstract: The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS)… read more here.
Keywords: hydrogen passivate; carbon; doped gan; carbon impurities ... See more keywords