The role of point defects related with carbon impurity on the kink of log J–V in GaN-on-Si epitaxial layers
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac8e0d
Abstract: Carbon impurity as point defects makes key impact on the leakage in GaN-on-Si structures. GaN-based epitaxial layers with different point defects by changing carbon-doped concentration were used to investigate the point defects behavior. It was… read more here.
Keywords: carbon impurity; epitaxial layers; carbon; point defects ... See more keywords
Estimations of edge plasma and impurity performance on HL-2M with EMC3-EIRENE modelling
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DOI: 10.1088/1402-4896/abf303
Abstract: The three-dimensional edge transport code EMC3-EIRENE has been employed to investigate the edge plasma behavior and carbon impurity transport in the HuanLiuqi-2M (HL-2M) tokamak. It is found that the outboard divertor target has a narrower… read more here.
Keywords: emc3 eirene; carbon; carbon impurity; edge plasma ... See more keywords