$$\hbox {Au}^{2+}$$Au2+-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method
Sign Up to like & getrecommendations! Published in 2017 at "International Journal of Thermophysics"
DOI: 10.1007/s10765-017-2246-2
Abstract: Silicon samples were implanted with $$\hbox {Au}^{2+}$$Au2+ ions of energy 100 keV and doses of $$10^{14}\,\hbox { cm}^{-2}$$1014cm-2. The area of the implanted region was $$2\,\hbox {mm}\times 2\,\hbox {mm}$$2mm×2mm. The size of the Si substrate samples… read more here.
Keywords: absorption; modulated free; hbox au2; free carrier ... See more keywords
Uniqueness of parameter estimates obtained from fitting free carrier absorption data of silicon wafers
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DOI: 10.1063/5.0059258
Abstract: In this paper, a data processing method is employed to improve the uniqueness of the electronic transport parameters (the carrier lifetime, carrier diffusion coefficient, and front and rear surface recombination velocities) obtained from fitting free… read more here.
Keywords: fitting free; free carrier; carrier absorption; carrier ... See more keywords