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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c20003
Abstract: Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as Shockley-Reed-Hall and Auger recombinations, electron-hole wavefunction separation from polarization charges, carrier leakage, and current…
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Keywords:
optical cavity;
carrier;
ingan gan;
auger coefficient ... See more keywords
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Published in 2018 at "Physical Review B"
DOI: 10.1103/physrevb.98.195411
Abstract: © 2018 American Physical Society. The carrier capture from a two-dimensional transition metal dichalcogenide monolayer into a quasi-zero-dimensional potential is a decisive process to exploit these remarkable materials as, e.g., single-photon sources. Here, we study…
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Keywords:
carrier capture;
capture two;
energy;
control ... See more keywords