Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
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DOI: 10.7567/apex.11.041001
Abstract: The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Hall-effect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at… read more here.
Keywords: metalorganic vapor; carrier compensation; compensation; compensation metalorganic ... See more keywords