Articles with "carrier diffusion" as a keyword



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Long Minority‐Carrier Diffusion Length and Low Surface‐Recombination Velocity in Inorganic Lead‐Free CsSnI3 Perovskite Crystal for Solar Cells

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Published in 2017 at "Advanced Functional Materials"

DOI: 10.1002/adfm.201604818

Abstract: Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their… read more here.

Keywords: diffusion; solar cells; cssni3; minority carrier ... See more keywords
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Fullerene‐Liquid‐Crystal‐Induced Micrometer‐Scale Charge‐Carrier Diffusion in Organic Bulk Heterojunction

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202210463

Abstract: The short charge‐carrier diffusion length (LD) (100–300 nm) in organic bulk heterojunction (BHJ) impedes the further improvement in power conversion efficiency (PCE) of organic solar cells (OSCs), especially for thick‐film (>400 nm) devices matching with… read more here.

Keywords: liquid crystal; carrier diffusion; charge; charge carrier ... See more keywords
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Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage

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Published in 2017 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-016-5124-y

Abstract: We report measurements of the minority-carrier diffusion length of n-type In0.53Ga0.47As epilayer samples using the surface photovoltage (SPV) method, and the minority-carrier lifetime of the same samples obtained by the microwave photoconductivity decay (μ-PCD) method.… read more here.

Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
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Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging

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Published in 2017 at "Journal of Luminescence"

DOI: 10.1016/j.jlumin.2017.01.013

Abstract: Abstract Photoluminescence (PL) imaging has been shown to be an efficient technique for investigating carrier diffusion in semiconductors. In the past, the measurement was typically carried out by measuring at one wavelength (e.g., at the… read more here.

Keywords: dependence carrier; diffusion; energy; gaas ... See more keywords
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Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC

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Published in 2018 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927618009698

Abstract: Gallium nitride is currently being investigated for demanding applications such as high-temperature and high-power electronics as well as space-based or other high radiation exposure applications. It has a wide bandgap and is more resistant than… read more here.

Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
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Carrier Diffusion and Recombination Anisotropy in the MAPbI3 Single Crystal.

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Published in 2021 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.1c07056

Abstract: MAPbI3, one of the archetypical metal halide perovskites, is an exciting semiconductor for a variety of optoelectronic applications. The photoexcited charge-carrier diffusion and recombination are important metrics in optoelectronic devices. Defects in grain interiors and… read more here.

Keywords: diffusion; diffusion recombination; carrier; mapbi3 ... See more keywords
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Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

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Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5039582

Abstract: We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum… read more here.

Keywords: resolved ray; time resolved; carrier; ray scattering ... See more keywords
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Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

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Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0150029

Abstract: Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 1019 cm−3. By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface… read more here.

Keywords: minority carrier; spectroscopy; diffusion length; carrier diffusion ... See more keywords
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Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

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Published in 2021 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2021.3079901

Abstract: Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that… read more here.

Keywords: etched regrown; continuously grown; carrier diffusion; diffusion lengths ... See more keywords
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Analysis of Local Minority Carrier Diffusion Lengths in Liquid-Phase Crystallized Silicon Thin-Film Solar Cells

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Published in 2017 at "IEEE Journal of Photovoltaics"

DOI: 10.1109/pvsc.2016.7749828

Abstract: We develop a method to quantify the local minority carrier diffusion lengths in interdigitated back-contact solar cells having a 10-μm-thick liquid-phase crystallized (LPC) Si absorber by light-beam induced current (LBIC) measurements. The method is verified… read more here.

Keywords: diffusion lengths; minority carrier; carrier diffusion;