Low Power Switching through Disorder and Carrier Localization in Bismuth Doped Germanium Telluride Phase Change Memory Nanowires.
Sign Up to like & getrecommendations! Published in 2020 at "ACS nano"
DOI: 10.1021/acsnano.9b08986
Abstract: One of the major problems with phase change memory (PCM) is the high current density required for the crystal-amorphous transformation via a melt-quench process. However, alternative low-energy pathways of amorphization via a defect-assisted process have… read more here.
Keywords: phase change; gete nanowires; carrier; carrier localization ... See more keywords
Charge Carrier Localization in Doped Perovskite Nanocrystals Enhances Radiative Recombination
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.1c01567
Abstract: Nanocrystals based on halide perovskites offer a promising material platform for highly efficient lighting. Using transient optical spectroscopy, we study excitation recombination dynamics in manganese-doped CsPb(Cl,Br)3 perovskite nanocrystals. We find an increase in the intrinsic… read more here.
Keywords: radiative recombination; perovskite nanocrystals; charge carrier; recombination ... See more keywords
Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-18964-w
Abstract: The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel… read more here.
Keywords: field; effect; field effect; carrier localization ... See more keywords
Carrier localization in the vicinity of dislocations in InGaN
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4973278
Abstract: We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological… read more here.
Keywords: dislocations ingan; microscopy; dislocation; carrier localization ... See more keywords
Investigation of carrier localization in InAs/AlSb type-II superlattice material system
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5127198
Abstract: We investigate carrier localization in the InAs/AlSb type-II superlattice (T2SL) material system using temperature- and excitation power (Iex)-dependent photoluminescence (PL). Evidence of carrier localization in T2SLs was observed by an S-shaped temperature dependence of the… read more here.
Keywords: carrier; localization; carrier localization; localization inas ... See more keywords
Chemical reaction induced carrier localization in nanometer-thin Al/Ru, Al/Co, and Al/Mo superlattices.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab453f
Abstract: It is well-known that the electrical conductivity of a metallic film reduces dramatically when the film becomes very thin. This effect is mainly attributed to surface scattering of the conducting carriers. In a multilayer structure,… read more here.
Keywords: induced carrier; conductance; chemical reaction; localization ... See more keywords
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.95.125314
Abstract: The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the… read more here.
Keywords: carrier; gan gan; auger recombination; carrier localization ... See more keywords
Effect of Carrier Localization and Shockley-Read-Hall Recombination on the Spatial Distribution of Electroluminescence in InGaN LEDs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Photonics Journal"
DOI: 10.1109/jphot.2018.2880319
Abstract: We investigate divergent behaviors in the emission of blue and green light-emitting diodes (LEDs) when they are subjected to the current-stress aging. Microscopic hyperspectral imaging is introduced to measure spatially resolved mappings of the peak… read more here.
Keywords: read hall; shockley read; recombination; localization ... See more keywords
Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-017-2087-8
Abstract: Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared… read more here.
Keywords: polarization effect; recombination; carrier; carrier localization ... See more keywords