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Published in 2024 at "Micromachines"
DOI: 10.3390/mi15111353
Abstract: For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process…
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Keywords:
single event;
damage;
current carrier;
carrier mapping ... See more keywords