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Published in 2020 at "Advanced materials"
DOI: 10.1002/adma.201908461
Abstract: Carrier multiplication (CM) is the amplification of the excited carrier density by two times or more when the incident photon energy is larger than twice the bandgap of semiconductors. A practical approach to demonstrate the…
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Keywords:
photocurrent;
quantum;
carrier multiplication;
energy ... See more keywords
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Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202203400
Abstract: Carrier multiplication (CM), multiexciton generation by absorbing a single photon, enables disruptive improvements in photovoltaic conversion efficiency. However, energy conservation constrains the threshold energy to at least twice bandgap (2 Eg$ E_\text{g}$ ). Here, a…
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Keywords:
threshold limit;
transition metal;
metal dichalcogenides;
carrier multiplication ... See more keywords
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Published in 2019 at "ACS Applied Energy Materials"
DOI: 10.1021/acsaem.8b01779
Abstract: Carrier multiplication (CM) is the process in which multiple electron–hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by…
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Keywords:
rate constant;
carrier multiplication;
rate;
distinct rate ... See more keywords
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Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b05336
Abstract: Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV detection and high-sensitivity and low-noise "sandwich" photodetector with large detective area is…
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Keywords:
carrier multiplication;
photodetector;
graphene;
ultraviolet ... See more keywords
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Published in 2019 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2019.2927622
Abstract: Amorphous materials have low mobility due to their nature of disorder. Surprisingly, some disordered materials showed photocurrent amplification not by conventional photoconductive gain. Recently, amorphous Silicon (a-Si) photodiodes with thin a-Si layer (∼40 nm) have…
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Keywords:
carrier multiplication;
amorphous silicon;
trap induced;
gain ... See more keywords