Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating
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DOI: 10.1080/14686996.2017.1312520
Abstract: Abstract The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B… read more here.
Keywords: carrier properties; doped films; atomic layer; carrier ... See more keywords