Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate
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DOI: 10.21883/tp.2023.01.55451.166-22
Abstract: Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type… read more here.
Keywords: algaas gaas; lift technique; emitting diodes; carrier substrate ... See more keywords