Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core
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DOI: 10.1016/j.jlumin.2018.02.045
Abstract: Abstract We investigated the spatial cathodoluminescence (CL) quenching of Si doped AlN/Al shell/core particles along the radial direction. The quenching characteristic position gradually shifts to a more central location with emission wavelength increasing. This effect… read more here.
Keywords: carriers induced; doped aln; luminescence; hot carriers ... See more keywords