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Published in 2017 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2017.2713415
Abstract: We report on the characterization of narrow-bandgap (Eg ≍ 0.4 eV, at 300 K) interband cascade thermophotovoltaic (TPV) devices with InAs/GaSb/AlSb type-II superlattice absorbers. Two device structures with different numbers of stages (two and three)…
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Keywords:
interband cascade;
narrow bandgap;
cascade thermophotovoltaic;