Design of a power efficient, high slew rate and gain boosted improved recycling folded cascode amplifier with adaptive biasing technique
Sign Up to like & getrecommendations! Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-2969-1
Abstract: This paper presents an adaptive Improved Recycling Folded Cascode (IRFC) amplifier with improved gain, high slew rate, high phase margin and reduced power consumption. The proposed design is implemented using 180 nm technology with a supply… read more here.
Keywords: cascode amplifier; slew rate; cascode; recycling folded ... See more keywords
Novel inspection-based mid-band derivations for CMOS cascodes and gm-boosted topologies along-with simplified compound structure gain-analysis
Sign Up to like & getrecommendations! Published in 2017 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-016-0881-3
Abstract: This article demonstrates simplified mid-band derivations for CMOS cascode and gm-boosted cascode. While the cascode mid-band analysis is addressed in some textbooks through varying brief treatments, it is provided in this paper in a more… read more here.
Keywords: derivations cmos; analysis; cascode; mid band ... See more keywords
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acd718
Abstract: A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal–insulator–semiconductor–high-electron-mobility transistors (MIS–HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the… read more here.
Keywords: cascode; cascode switch; power; multi gan ... See more keywords
$K$ -Band CMOS-Based MESFET Cascode Amplifiers
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2018.2840967
Abstract: Cascode amplifiers consisting of a common-source MOSFET integrated with a common-gate metal–semiconductor field-effect transistor (MESFET) have been manufactured using a commercial 45-nm silicon-on-insulator RF CMOS process. The enhanced breakdown voltage of the MESFETs combined with… read more here.
Keywords: band cmos; cascode; based mesfet; cmos based ... See more keywords
Study on Dynamic Body Bias Controls of RF CMOS Cascode Power Amplifier
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2018.2849209
Abstract: This letter presents a highly linear cascode CMOS power amplifier (PA) that uses dynamic body linearizers based on envelope signal injection to the bodies of the common source and common gate power transistors. The linearizers… read more here.
Keywords: cascode; power; power amplifier; tex math ... See more keywords
Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2020.3022083
Abstract: A 650-V and 10-A silicon carbide (SiC) stacked cascode assembly has been proposed and demonstrated, in which a low-voltage Si-MOSFET (LV Si-MOSFET) is stacked on a high-voltage SiC buried gate static induction transistor (HV SiC-BGSIT).… read more here.
Keywords: cascode; induction transistor; gate static; static induction ... See more keywords
Introducing Optical Cascode GaN HEMT
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2657498
Abstract: A novel optically activated cascode gallium nitride (GaN) high-electron-mobility transistor (HEMT) is introduced and evaluated in this paper. Furthermore, optical triggering of GaN HEMT structures by cost-effective and high-power long-wavelength light sources is proposed for… read more here.
Keywords: cascode gan; cascode; gan hemt; optical cascode ... See more keywords
Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2897602
Abstract: Different source field plate (FP) connections are compared for the all-GaN integrated cascode device to address the capacitance matching and turn-off controllability issues reported in the conventional GaN plus Si cascode. The experimental results suggest… read more here.
Keywords: cascode; plate designs; field; source ... See more keywords
Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3099247
Abstract: Although the gallium nitride (GaN) high-electron-mobility transistor/silicon carbide (SiC) junction field-effect transistor (JFET) cascode device exhibits certain performance advantages over the SiC metal–oxide–semiconductor field-effect transistor (MOSFET), its robustness in harsh operating conditions is unknown. In… read more here.
Keywords: 650 gan; short circuit; cascode devices; cascode ... See more keywords
Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications
Sign Up to like & getrecommendations! Published in 2020 at "Energies"
DOI: 10.3390/en13102628
Abstract: We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias stress (VGS, OFF). We have investigated… read more here.
Keywords: state; degradation; cascode; vth shift ... See more keywords