Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices
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DOI: 10.1109/tie.2021.3070519
Abstract: Silicon carbon (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and SiC/Si cascode devices are two popular normally-off SiC power devices. In terms of the rated voltage and current of a single chip, there are always some… read more here.
Keywords: mosfets sic; cascode devices; paralleling suitability; sic mosfets ... See more keywords
Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3099247
Abstract: Although the gallium nitride (GaN) high-electron-mobility transistor/silicon carbide (SiC) junction field-effect transistor (JFET) cascode device exhibits certain performance advantages over the SiC metal–oxide–semiconductor field-effect transistor (MOSFET), its robustness in harsh operating conditions is unknown. In… read more here.
Keywords: 650 gan; short circuit; cascode devices; cascode ... See more keywords