Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications
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DOI: 10.1088/1361-6641/acd718
Abstract: A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal–insulator–semiconductor–high-electron-mobility transistors (MIS–HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the… read more here.
Keywords: cascode; cascode switch; power; multi gan ... See more keywords