Reduced metal contamination from crucible and coating using a silicon nitride based diffusion barrier for the growth of cast quasi-single crystalline silicon ingots
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.02.055
Abstract: Abstract During the crystallization of directionally solidified silicon such as multicrystalline or cast quasi-single crystalline silicon, the diffusion of metal impurities from crucible and coating into the solid silicon ingot at high temperatures creates a… read more here.
Keywords: cast quasi; single crystalline; contamination; diffusion ... See more keywords