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Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6325-3
Abstract: The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and…
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Keywords:
distribution measured;
characterization dilute;
grown sample;
cathodoluminescence ... See more keywords
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Published in 2023 at "Coatings"
DOI: 10.3390/coatings13060992
Abstract: The high quality of crystal growth and advanced fabrication technology of silicon carbide (SiC) in power electronics enables the control of optically active defects in SiC, such as silicon vacancies (VSi). In this paper, VSi…
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Keywords:
cathodoluminescence characterization;
point defects;
cathodoluminescence;
ion ... See more keywords