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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08176-w
Abstract: The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the intersection…
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Keywords:
length;
ingap;
cathodoluminescence study;
diffusion length ... See more keywords