Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
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DOI: 10.1039/c9tc01164a
Abstract: Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications. read more here.
Keywords: prepared atomic; cationic compositional; thin film; atomic layer ... See more keywords