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Published in 2024 at "IEEE Access"
DOI: 10.1109/access.2024.3419921
Abstract: Wide-band gap semiconductor devices based on GaN materials, such as high electron mobility transistors (HEMT), are gradually replacing traditional Si devices in industrial applications owing to their excellent electrothermal properties. Nonetheless, reliability concerns and accurate…
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Keywords:
cauer thermal;
thermal network;
model;
network model ... See more keywords