Analysis of the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using a single-phase-lag (SPL) model
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-021-01681-z
Abstract: The main objective of this work is to study the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using the single-phase-lag heat conduction model to describe the effects of the metallic conductive filament… read more here.
Keywords: transient joule; cbram; model; heating effect ... See more keywords
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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DOI: 10.1016/j.surfcoat.2018.08.093
Abstract: Abstract We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the… read more here.
Keywords: cbram; igzo ga2o3; taos based; igzo ... See more keywords
CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications
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DOI: 10.1038/s41598-022-08127-x
Abstract: Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is… read more here.
Keywords: memory cell; memory; cbram; non volatile ... See more keywords