Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
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DOI: 10.1109/tns.2017.2666147
Abstract: Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 \times 10^{13}$ n/cm2.… read more here.
Keywords: cbram cells; resistance state; displacement damage; resistance ... See more keywords