LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "ccd cmos" as a keyword



Potential-driven model for charge transfer efficiency in CCD-on-CMOS image sensors: addressing traps and nanogap potential wells

Sign Up to like & get
recommendations! Published in 2025 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ae14a5

Abstract: Although manufacturing charge-coupled devices (CCDs) on complementary metal–oxide–semiconductor (CMOS) processes enhances device integration and reduces power consumption, it introduces process features like thin oxide layers and nanoscale gate gaps. Specifically, thinned oxides cause gate oxide… read more here.

Keywords: charge transfer; cmos; model; ccd cmos ... See more keywords
Photo by testalizeme from unsplash

Intrapixel effects of CCD and CMOS detectors

Sign Up to like & get
recommendations! Published in 2017 at "Journal of Instrumentation"

DOI: 10.1088/1748-0221/12/04/c04010

Abstract: Intrapixel nonuniformity is known to exist in CCD and CMOS image sensors, though the effects in backside illuminated (BSI) CCDs are too small to be a concern for most astronomical observations. However, projects like the… read more here.

Keywords: effects ccd; intrapixel effects; ccd cmos; cmos detectors ... See more keywords

Trapeze Active Deep Trench Designs for Enhanced Charge Transfer Performances in CCD-on-CMOS Image Sensor

Sign Up to like & get
recommendations! Published in 2025 at "IEEE Sensors Journal"

DOI: 10.1109/jsen.2025.3632883

Abstract: A new design of active deep trench chargecoupled device (CCD)-on-CMOS is described and characterized, featuring a two-phase pixel with a built-in electric field that enables highly efficient and fast charge transfer. A charge transfer inefficiency… read more here.

Keywords: ccd cmos; active deep; charge transfer; transfer ... See more keywords

Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Sign Up to like & get
recommendations! Published in 2024 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2024.3358381

Abstract: Total ionizing dose (TID) effects are explored in a fully depleted n-type CCD-on-CMOS based on capacitive deep trench isolation (CDTI). The root cause of the observed degradation on full well charge (FWC), charge transfer efficiency… read more here.

Keywords: ccd cmos; dose effects; ionizing dose; total ionizing ... See more keywords