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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2863682
Abstract: The application of capacitive deep trench isolation (CDTI) as a shared vertical transfer gate (VTG) in a back-side-illuminated CMOS image sensor pixel is investigated using 3-D device-level simulations. The parasitic capacitance existence between CDTI and…
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Keywords:
cdti;
transfer;
device level;
capacitive deep ... See more keywords