Voltage Boosted Fail Detecting Circuit for Selective Write Assist and Cell Current Boosting for High-Density Low-Power SRAM
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3226464
Abstract: In low supply voltage ( $\text{V}_{\mathrm {DD}}$ ), the wordline (WL) underdrive read assist and the negative bitline (NBL) write assist circuits are widely used for stable operation of SRAM. However, NBL consumes enormous energy… read more here.
Keywords: cell current; voltage; current boosting; assist ... See more keywords