An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution
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DOI: 10.1109/jeds.2017.2758026
Abstract: This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM… read more here.
Keywords: cell leakage; leakage; dram; distribution ... See more keywords