Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy
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DOI: 10.35848/1882-0786/abfb87
Abstract: We form carbon-doped n-BaSi2(0.35 μm)/p-Si(111) heterojunction diodes by radio-frequency sputtering using BaSi2 and SiC targets, and demonstrate the solar cell operation for the first time under AM1.5 illumination. The electron trap level was measured to… read more here.
Keywords: heterojunction diodes; deep level; solar cell; level ... See more keywords