Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2900736
Abstract: Transient cell current caused by the trapping/detrapping of grain boundary traps in the polycrystalline silicon (poly-Si) channel of a 3-D NAND cell string is comprehensively studied in this paper. This transient has a time constant… read more here.
Keywords: grain boundary; boundary trap; transient; nand ... See more keywords