Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400751
Abstract: Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing… read more here.
Keywords: sio2 interface; dopant diffusion; center defects; interface ... See more keywords
H-Center and V-Center Defects in Hybrid Halide Perovskites
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DOI: 10.1021/acsenergylett.7b00995
Abstract: The self-trapping of holes with the formation of a molecular X2– anion is a well-established process in metal halide (MX) crystals, but V-center (2X– + h+ → X2–) and H-center (X– + Xi– + h+… read more here.
Keywords: center defects; hybrid halide; defects hybrid; halide perovskites ... See more keywords