IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC
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DOI: 10.3390/ma16072935
Abstract: In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC… read more here.
Keywords: center sic; ibil measurement; simulation center; optical simulation ... See more keywords